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ScienceONThis paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson's equation for symmetrical Double Ga...
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RISS 인기검색어
https://www.riss.kr/link?id=A101324449
- 저자
- 발행기관
- 학술지명
- 권호사항
-
발행연도
2011
-
작성언어
English
- 주제어
-
등재정보
SCOPUS,KCI등재
-
자료형태
학술저널
- 발행기관 URL
-
수록면
310-314(5쪽)
- 제공처
-
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다국어 초록 (Multilingual Abstract)
This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson's equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage roll-off is very important short channel effects(SCEs) for nano structures since it determines turn on/off of MOSFETs. Threshold voltage has to be constant with decrease of channel length, but it shows roll-off due to SCEs. This analytical transport model is used to obtain the dependence of threshold voltage on channel doping profile for DGMOSFET profiles. Also we have analyzed threshold voltage for structure of channel such as channel length and gate oxide thickness.
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