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https://www.riss.kr/link?id=O40390289
1996년
eng
학술저널
INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS
3107-3110 [※수록면이 p5 이하이면, Review, Columns, Editor's Note, Abstract 등일 경우가 있습니다.]
9810227779; 9810229364
Physics of semiconductors
International conference; 23rd
Twenty-third international conference on the physics of semiconductors
Berlin
1996; Jul
0
상세조회0
다운로드
Dopant and Intrinsic Point-Defect Interactions in Si (invited)
First Principles Theory of Impurity-Vacancy Complexes in Diamond
Hydrogen Localization at a Vacancy in Silicon Lattice