Increased spectral sensitivity of Si photodetector by surface plasmon effect of Ag nanowires

다국어 초록 (Multilingual Abstract)

<P><B>Abstract</B></P> <P>Highly-sensitive Si photodetectors were prepared by using Ag nanowires (AgNWs). A transparent indium-tin-oxide (ITO) coating was coated on a Si substrate followed by spin-coating of AgNWs-containing solution. AgNWs having average length of 5–20μm with a diameter of about 40–60nm were observed in FESEM images. The haze effect of AgNWs was totally avoided because of the optimum value of diameter. The transmittance of above 85% was shown by AgNWs over a broad spectral range due to surface plasmon resonance effect. The AgNW-coated device showed an excellent rectifying ratio of 288. Under light illumination, AgNWs-coated device exhibited a significant photoresponse ratio of 5373. This advanced feature of AgNWs-templated method would be applied in broadband wavelength photodetection devices.</P> <P><B>Highlights</B></P> <P> <UL> <LI> High-performing NIR photodetector was achieved by using AgNWs. </LI> <LI> Solution process was applied to coat AgNWs on Si. </LI> <LI> Surface plasmon effect significantly enhances the photoresponses. </LI> <LI> AgNW-embedding Si photodetector was effective to suppress reverse current. </LI> </UL> </P>