High Energy-density 0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 Thick Films Fabricated by Tape Casting for Energy-harvesting-device Applications

다국어 초록 (Multilingual Abstract)

0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 (0.72PZT-0.28PZNN) thick films wereprepared by using a tape casting method to develop new materials with high energy-density applicableto energy-harvesting devices. The piezoelectric strain constant (d33), dielectric constant("T33/"0), piezoelectric voltage constant (g33) and transduction coefficient (d33·g33) of the films wereaffected by the sintering temperature. These results could be attributed to the crystal structure,microstructures and secondary phases. However, the dielectric loss (tan) of the films was notchanged remarkably with increasing sintering temperature. Typically, a d33 of 452 pC/N, εT33/ε0 of 1444, d33·g33 of 20,340 × 10−15 m2/N and tanδ of 0.15% were obtained for the films sintered at 1050 ℃ for 1 h. The power generation performance of the piezoelectric unimorph cantilever wasassessed to demonstrate the feasibility of the 0.72PZT-0.28PZNN piezoelectric thick film. Also,theoretical models were employed to predict the resonance frequency of the unimorph cantilevergenerator, and the predicted values were compared with experimental data.

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