<P>We have investigated the electrical transports of double-walled carbon nanotube field effect transistors (DWNT-FETs) with modified contacts. The CNT/Au metal contacts of DWNT-FETs were modified with a self-assembled monolayer of 2-aminoethane...
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https://www.riss.kr/link?id=A107560863
2008
-
학술저널
4349-4352(4쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>We have investigated the electrical transports of double-walled carbon nanotube field effect transistors (DWNT-FETs) with modified contacts. The CNT/Au metal contacts of DWNT-FETs were modified with a self-assembled monolayer of 2-aminoethane...
<P>We have investigated the electrical transports of double-walled carbon nanotube field effect transistors (DWNT-FETs) with modified contacts. The CNT/Au metal contacts of DWNT-FETs were modified with a self-assembled monolayer of 2-aminoethanethiol molecules. In ambient air, the contact-modified DWNT-FETs showed a decreased conductance in the <I>p</I>-channel (negative gate voltages) and an increased conductance in the <I>n</I>-channel (positive gate voltages), while the original device showed <I>p</I>-type transport. In a vacuum, the <I>n</I>-channel current in the contact-modified DWNT-FET started to rise. We observed a clear <I>n</I>-type transport in the high vacuum. Almost no changes in the gate threshold voltages were observed by means of the contact-modification with a self-assembled monolayer. While the semiconducting DWNT-FET showed a clear transition from a <I>p</I>-type to <I>n</I>-type transistor with contact modification, no apparent changes were observed in semi-metallic DWNT devices.</P>
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