N-type single crystals of "CdTe : I"and "CdTe : In"were grown by bridgmann method and studied on their basic characteristics, i. e. lattics constants and energy band gap were 6.48 A˚, 1.44eV. Also, electrical resistivity, carrier ...
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다국어 초록 (Multilingual Abstract)
N-type single crystals of "CdTe : I"and "CdTe : In"were grown by bridgmann method and studied on their basic characteristics, i. e. lattics constants and energy band gap were 6.48 A˚, 1.44eV. Also, electrical resistivity, carrier ...
N-type single crystals of "CdTe : I"and "CdTe : In"were grown by bridgmann method and studied on their basic characteristics, i. e. lattics constants and energy band gap were 6.48 A˚, 1.44eV. Also, electrical resistivity, carrier mobility, and carrier concentration were about 10^-2Ω-cm, 300∼400㎠/V sec and about 10^17/㎤∼10^18/㎤. So, above characteristics were satisfied sufficiently to make the solar cell devices.
Next, Cu_(2-x)Cd_xTe-CdTe Heterojunction solar cells were made by chemical reaction that was replaced Cd ions of the CdTe crystal to Cu ions of coporous solution at the temperature 95℃, during the 2-minute. Also, their fundamental properties, i.e. J-V characteristics, Voc(open circuit voltage)and J_sc(closed circuit current)vs. photon flux density, Load characteristics and V_oc and J_sc vs. photon wavelength were measured. The resulting efficiency were about 5% according to the photon flux density and about 2.75% by Load characteristics.
The Load characteristics were compared to si-solar cells that efficiency was 4.30%. So, we conclude that the Cu_(2-x)Cd_xTe-CdTe Heterojuntion solar cell is excellent one, if we should develop their technology to be made mass product.
400GeV/c의 陽性子-原子核 反應에서의 2次 粒子들의 發生角分布