Mg0.1Zn0.9O NPs 합성 및 이를 이용한 QD-LED 제작

다국어 초록 (Multilingual Abstract)

We used the MgZnO as electron transport layer (ETL) to product Quantum Dot Light Emitting Diode (QD-LEDs) and investigated the difference in electrical and optical properties through the thickness of ETL. The use of MgZnO as ETL can compensate for the problem of imbalance of charges when using ZnO and the instability of the device caused by oxygen vacancy. Using the Sol-gel synthesis method, MgZnO (Mg 10 %) having a size of 5 nm was synthesized and coated to a thickness of 40 nm and 60 nm, respectively to produce two devices and Green quantum dots (CdSe) were used as the emission layer (EML) and Al was used as the cathode. EL and I-V-L of QD-LEDs with 40, 60 nm thick EML layers were investigated. As a result, the increase in luminance over voltage at 60 nm (ETL) was found to be higher than 40 nm (ETL). The maximum current efficiency of 60 nm (ETL) is 14.26 cd/A at 4.4 V, and the 40 nm (ETL) is 17.72 cd/A at 5.4 V, indicating that 60 nm has better current efficiency.