Triboelectric Charge Generation by Semiconducting SnO2 Film Grown by Atomic Layer Deposition

다국어 초록 (Multilingual Abstract)

Improving the energy harvesting efficiency of triboelectricgenerators (TEGs) requires exploring new types of materials thatcan be used, and understanding their properties. In this study, wehave investigated semiconducting SnO2 thin films as friction layersin TEGs, which has not been explored thus far. Thin films of SnO2with various thicknesses were grown by atomic layer deposition onSi substrates. Either polymer or glass was used as counter frictionlayers. Vertical contact/separation mode was utilized to evaluate theTEG efficiency. The results indicate that an increase in the SnO2 filmthickness from 5 to 25 nm enhances the triboelectric output voltageof the TEG. Insertion of a 400-nm-thick Pt sub-layer between theSnO2 film and Si substrate further increased the output voltage up to~120 V in a 2 cm × 2 cm contact area, while the enhancement wascancelled out by inserting a 10-nm-thick insulating Al2O3 filmbetween SnO2 and Pt films. These results indicate that n-typesemiconducting SnO2 films can provide triboelectric charge tocounter-friction layers in TEGs.
Keywords: triboelectric generator, semiconductor

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