Many researches have been commonly used photolithography in diverse fields to fabricate a fine pattern for transistor, capacitor, or integrated circuit. However, conventional photolithography has a fundamental limit on designing structures less than a...
Many researches have been commonly used photolithography in diverse fields to fabricate a fine pattern for transistor, capacitor, or integrated circuit. However, conventional photolithography has a fundamental limit on designing structures less than a diffraction limited size. Recently, novel ideas based on plasmonics have been introduced to overcome the diffraction limits in fabrication. The lithographic method, called plasmonic lithography, is very useful to fabricate structures smaller than diffraction limits without a fundamental deviation from a photolithographic system. The method is using an extraordinary transmission (EOT) beam generated by collective oscillations of electrons at metal and dielectric interface. Thus, the field is uniquely transmitted through hole arrays smaller than the wavelength of incident light.
In this paper, we designed the experiments to observe the differences between conventional photolithography and plasmonic lithography by controlling the gap distance between the mask and the photoresist. Consequently, we demonstrated that the different sized structures were formed with 300 nm and 600 nm sized array masks, and we experimentally confirmed that the difference is formed as the gap distance increases.