Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures

다국어 초록 (Multilingual Abstract)

2D group‐III nitride materials have shown a great promise for applications in optoelectronic devices thanks to their thickness‐dependent properties. However, the epitaxial growth of 2D group‐III nitrides remains a challenge. In this work, epitaxial growth of 2D GaN with well‐controlled lattice structures and bandgaps is achieved by plasma‐enhanced metal organic chemical vapor deposition via effective regulation of plasma energy and growth temperature. The structure of graphene/2D GaN/Si heterostructures is carefully investigated by high‐resolution transmission electron microscopy. The formation mechanism of the 2D GaN layer is clearly clarified by theoretical calculations. Furthermore, a bandgap for 2D GaN ranging from ≈4.18 to ≈4.65 eV varying with the numbers of layers is theoretically calculated and experimentally confirmed. 2D GaN with well‐controlled lattice structure and bandgap holds great potential for the development of deep ultraviolet light‐emitting diodes, energy conversion devices, etc.
2D GaN with well‐controlled lattice structure and bandgap is epitaxially grown by plasma‐enhanced metal organic chemical vapor deposition via effective regulation of plasma energy and growth temperature. The Eg for 2D GaN layers in P63MC (four‐layer) and R3m (six‐layer) structure is determined to be ≈4.65 and ≈4.18 eV, respectively, and the corresponding mechanisms are revealed accordingly.