Novel Punch-through Diode Triggered SCR for Low Voltage ESD Protection Applications

다국어 초록 (Multilingual Abstract)

This research presented the concept of employing the punch-through diode triggered SCRs (PTTSCR) for low voltage ESD applications such as transient voltage suppression (TVS) devices. In order to demonstrate the better electrical properties, various traditional ESD protection devices, including a silicon controlled rectifier (SCR) and Zener diode, were simulated and analyzed by using the TCAD simulation software. The simulation result demonstrates that the novel PTTSCR device has better performance in responding to ESD properties, including DC dynamic resistance and capacitance, compared to SCR and Zener diode. Furthermore, the proposed PTTSCR device has a low reverse leakage current that is below 10<SUP>-12</SUP> A, a low capacitance of 0.07 fF/㎛², and low triggering voltage of 8.5 V at 5.6×10<SUP>-5</SUP> A. The typical properties couple with the holding voltage of 4.8 V, while the novel PTTSCR device is compatible for protecting the low voltage, high speed ESD protection applications. It proves to be good candidates as ultra-low capacitance TVS devices.

목차 (Table of Contents)

• Abstract
• Ⅰ. INTRODUCTION
• Ⅱ. DEVICE STRUCTURE
• Ⅲ. DEVICE SIMULATION AND RESULTS
• Ⅴ. CONCLUSIONS
• REFERENCES

참고문헌 (Reference)

1 A. Amerasekera, 18 : 314-320, 1995

2 D. Bouangeune, 54 : 2125-2130, 2013

3 R. van Dalen, 61 : 149-, 2004

4 S. Mahajan, 2 : 59-, 2006

5 J. Urresti, 45 : 1181-, 2005

6 S. W. Song, 42 : S765-, 2003

7 Y. Ch. King, 43 : 2037-, 1996

8 M. Kang, 42 : 837-, 2011

9 J. A. Salcedo, 25 : 658-, 2004

10 H. Xie, 26 : 121-, 2005

11 M. Shur, "Introduction to Electronic Device" John Wiley & Sons, Ltd 226-, 1996

12 S. S. Choi, "Development of Transient Voltage Suppressor Device with Abrupt Junctions Embedded by Epitaxial Growth Technology" 대한금속·재료학회 5 (5): 59-62, 2009

13 E. Romero, "Application note: AND8319/D, On Semiconductor"