Recently, the demand for lidar systems for autonomous driving is increasing, and research on Shortwave Infrared(SWIR)photodetectors for this purpose is being actively conducted. Most SWIR photodetectors currently being developed are basedon InGaAs, an...
Recently, the demand for lidar systems for autonomous driving is increasing, and research on Shortwave Infrared(SWIR)photodetectors for this purpose is being actively conducted. Most SWIR photodetectors currently being developed are basedon InGaAs, and have the disadvantages of complex processes, high prices, and limitations in research due to monopoly. In addition,current SWIR photodetectors use lasers in the 905 nm wavelength band, which can pass through the pupil and cause damageto the retina. Therefore, it is required to develop a SWIR photodetector using a wavelength band of 1400 nm or more tobe safe for human eyes, and to develop a material that can replace the proprietary InGaAs. PbS QDs are group 4-6 compoundsemiconductors whose absorption wavelength band can be adjusted from 1000 to 2700 nm, and have the advantage of beingsimple to process. Therefore, in this study, PbS QDs having an absorption wavelength peak of 1415 nm were synthesized, anda SWIR photodetector was fabricated using this. In addition, the photodetector's responsivity was improved by applying P3HTand ZnO NPs to improve electron hole mobility. As a result of the experiment, it was confirmed that the synthesized PbS QDshad excellent FWHM characteristics compared to commercial PbS QDs, and it was confirmed that the photodetector had a maximumcurrent change of about 1.6 times.