In this paper, we analyzed the current path in the O/N/O (Oxide/Nitride/Oxide) structure of 3D NAND Flashmemory and in the O/N/F (Oxide/Nitride/Ferroelectric) structure where the blocking oxide is replaced by aferroelectric. In the O/N/O structure, wh...
In this paper, we analyzed the current path in the O/N/O (Oxide/Nitride/Oxide) structure of 3D NAND Flashmemory and in the O/N/F (Oxide/Nitride/Ferroelectric) structure where the blocking oxide is replaced by aferroelectric. In the O/N/O structure, when Vread is applied, a current path is formed on the backside of thechannel due to the E-fields of neighboring cells. In contrast, the O/N/F structure exhibits a current path formedon the front side due to the polarization of the ferroelectric material, causing electrons to move toward thechannel front. Additionally, we performed an examination of device characteristics considering channel thicknessand channel length. The analysis results showed that the front electron current density in the O/N/F structureincreased by 2.8 times compared to the O/N/O structure, and the front electron current density ratio of the O/N/Fstructure was 17.7% higher. Therefore, the front current path is formed more effectively in the O/N/F structurethan in the O/N/O structure.