채널에 단일 그레인 경계를 갖는 다결정 실리콘 박막 트랜지스터 = An Excimer laser Annealed poly-Si Thin Transistor Designed for Reduction of Grainboundary Effect

다국어 초록 (Multilingual Abstract)

- The A Sr0.7Bi2.6Ta2O9(SBT)thin films are deposited on Pt-coated electrode(Pt/TiO2/SiO2/Si) using a RF magnetron sputtering method. The electrical properties of SBT capacitors with top electrodes were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at 750oC and grains largely grew in oxygen annealing atmosphere. The electrical properties of SBT capacitor with top electrodes represent a favorable properties in Pt electrode. The maximum remanent polarization and the coercive electric field with Pt electrode are 12.40C/cm2and 30kV/cm, respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 6.8110-10 A/cm2, respectively.