Effect of Ge-Nanodot Incorporation on Light-Emission from ZnO Thin Films

다국어 초록 (Multilingual Abstract)

ZnO films have been implanted with Ge- ions to doses (nGe) of (1.5 ∽ 4) ×1016 cm-2 and subsequently annealed at 700 ∽ 1000 ℃ for 20 min to form Ge nanodots (NDs) within the ZnO matrix. Transmission electron microscopy images demonstrate the existence of irregularly-shaped Ge NDs of ∽15 to ∽30 nm in the central region of the Ge--implanted ZnO films (ZnO:Ge) after
annealing. The photoluminescence (PL) spectra of the annealed ZnO:Ge films are observed in the infrared (IR) range of ∽0.75 to ∽0.95 eV and show a maximum intensity at nGe = 1.5 ×1016 cm-2, which is consistent with the dose-dependent relative intensity ratio of UV and visible PL emissions from near-band-edge and oxygen-related deep levels (DLs), respectively. These PL behaviors are attributed to the Ge suboxide states at the interfaces of Ge NDs/DL sites and Ge-related molecular complexes within the ZnO matrix, as confirmed by the X-ray diraction patterns.

다국어 초록 (Multilingual Abstract)

ZnO films have been implanted with Ge- ions to doses (nGe) of (1.5 ∽ 4) ×1016 cm-2 and subsequently annealed at 700 ∽ 1000 ℃ for 20 min to form Ge nanodots (NDs) within the ZnO matrix. Transmission electron microscopy images demonstrate the existence of irregularly-shaped Ge NDs of ∽15 to ∽30 nm in the central region of the Ge--implanted ZnO films (ZnO:Ge) after
annealing. The photoluminescence (PL) spectra of the annealed ZnO:Ge films are observed in the infrared (IR) range of ∽0.75 to ∽0.95 eV and show a maximum intensity at nGe = 1.5 ×1016 cm-2, which is consistent with the dose-dependent relative intensity ratio of UV and visible PL emissions from near-band-edge and oxygen-related deep levels (DLs), respectively. These PL behaviors are attributed to the Ge suboxide states at the interfaces of Ge NDs/DL sites and Ge-related molecular complexes within the ZnO matrix, as confirmed by the X-ray diraction patterns.

참고문헌 (Reference)

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