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https://www.riss.kr/link?id=O39664180
1996년
eng
0026-2714
1872-941X
SCI;SCIE;SCOPUS
학술저널
MICROELECTRONICS AND RELIABILITY
1683-1690 [※수록면이 p5 이하이면, Review, Columns, Editor's Note, Abstract 등일 경우가 있습니다.]
Reliability of electron devices, failure physics and analysis
European symposium; 7th
Enschede; The Netherlands
1996; Oct
0
상세조회0
다운로드
Comprehensive gate-oxide reliability evaluation for DRAM processes (Invited Paper)
A new physics-based model for time-dependent dielectric breakdown (Invited Paper)
The impact of oxide degradation on the low frequency (I/f) noise behaviour of p channel MOSFETs
Study of the soft leakage current induced ESD on LDD transistor (Invited Paper)