Switching of ferroelectric P-V hysteresis curve by light irradiation has been achieved in organic
photoconductor (PC) copper phthalocyanine (CuPc)/inorganic ferroelectric (FE) BaTiO3 (BTO)
heterojunction photomemory. The main mechanisms of this PC/FE ...
Switching of ferroelectric P-V hysteresis curve by light irradiation has been achieved in organic
photoconductor (PC) copper phthalocyanine (CuPc)/inorganic ferroelectric (FE) BaTiO3 (BTO)
heterojunction photomemory. The main mechanisms of this PC/FE photomemory device are the
resistance decrease of photoconductor by light irradiation and the increase of ferroelectric remanent
polarization by increasing applied bias. We have also investigated the eect of CuPc thickness on the
photoinduced change of ferroelectric P-V hysteresis curve, and found that the intrinsic insulating
dark resistance of organic photoconductor CuPc lm layer plays an important role for high eciency
of PC/FE heterojunction photomemory. Light irradiation could switch the remanent polarization
of ferroelectric BTO in this heterojunction up to 3 C/cm2, almost full remanent polarization of
BTO single layer ferroelectric, whereas remanent polarization of that without light irradiation was
almost zero. The eciency of this heterojunction photomemory reached up to 500 %.