<P>For precise measurements of the absolute electron density in a bis-trimethylsilymethane (BTMSM) and argon plasma, the authors adapted a wave cutoff method and used the plasma frequency. The films were deposited on a p-type Si(1 0&thins...
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https://www.riss.kr/link?id=A107411572
2007
-
SCOPUS,SCIE
학술저널
4164-4167(4쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>For precise measurements of the absolute electron density in a bis-trimethylsilymethane (BTMSM) and argon plasma, the authors adapted a wave cutoff method and used the plasma frequency. The films were deposited on a p-type Si(1 0&thins...
<P>For precise measurements of the absolute electron density in a bis-trimethylsilymethane (BTMSM) and argon plasma, the authors adapted a wave cutoff method and used the plasma frequency. The films were deposited on a p-type Si(1 0 0) substrate by means of UV-assisted inductively coupled plasma-enhanced chemical vapour deposition. Fourier transform infrared spectroscopy was used to investigate the bonding configuration of the SiCH films. With UV illumination, the electron density was found to increase in the low power region and decrease in the high power region. The peak intensity of Si-CH<SUB>3</SUB> decreases with UV illumination under all conditions. Moreover, when the UV source illuminates the plasma, the peak intensity of CH<SUB>2</SUB> increases whereas the peak intensity of CH<SUB>3</SUB> decreases.</P>