Transport Properties in Samples Containing InAs Self-Assembled Dots and Dashes

다국어 초록 (Multilingual Abstract)

We report transport measurements of a two-dimensional electron gas
(2DEG) formed in a GaAs/AlGaAs quantum well, in which InAs has
been inserted into the centre of the GaAs quantum well.
Depending on the capping layers, the InAs forms either
self-assembled quantum dots or dashes, and due to the resulting
strain fields repulsive short-range scattering is experienced by
the conduction electrons in the 2DEG. The single electron
transport is through a dot or dash isolated using a pair of
split-gate deposited on the sample surface. By application of a
source-drain voltage we investigate the energies of a dot or dash
that is trapped within the one dimensional channel defined by the
range 0.5-2 meV. We speculate that the dot and dash are formed
by strain modulation of the conduction of the conduction band in
the GaAs quantum well.