A bulk-grounded DRAM cell, which sets the substrate bulk voltage to the ground level by eliminating the conventional charge pumping V_(BB) generator, was proposed for use in multi-gigabit DRAMS using triple-well CMOS technology. This cell reduced the ...
A bulk-grounded DRAM cell, which sets the substrate bulk voltage to the ground level by eliminating the conventional charge pumping V_(BB) generator, was proposed for use in multi-gigabit DRAMS using triple-well CMOS technology. This cell reduced the leakage current to half, increased the refresh time by 40-70% and reduced the stand-by power consumption, compared to the conventional cell.