Co/Ni 복합 실리사이드 제조 온도에 따른 측벽 스페이서 물질 반응 안정성 연구

다국어 초록 (Multilingual Abstract)

We investigate the reaction stability of cobalt and nickel with side-wall materials of SiO₂ and Si₃N₄. We deposited 15 ㎚-Co and 15 ㎚-Ni on SiO₂(200 nm)/p-type Si(100) and Si₃N₄(70 ㎚)/p-type Si(100). The samples were annealed at the temperatures of 700~1100℃ for 40 seconds with a rapid thermal annealer. The sheet resistance, shape, and composition of the residual materials were investigated with a 4-points probe, a field emission scanning electron microscopy, and an AES depth profiling, respectively. Samples of annealed above 1000℃ showed the agglomeration of residual metals with maze shape and revealed extremely high sheet resistance. The Auger depth profiling showed that the SiO₂ substrates had no residual metallic scums after H₂SO₄ cleaning while Si₃N₄ substrates showed some metallic residuals. Therefore, the SiO₂ spacer may be appropriate than Si₃N₄ for newly proposed Co/Ni composite salicide process.

목차 (Table of Contents)

• Abstract
• 1. 서론
• 2. 실험방법
• 3. 결과 및 고찰
• 4. 결론
• 감사의 글
• 참고문헌