We reported a new method to enhance the photoluminescence (PL) properties of Eu<SUP>3+</SUP> ions doped Gd₂Mo₄O15 phosphors via cation substitution. With the aid of conventional sol-gel method, a series of Eu<SUP>3+</SUP> i...
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https://www.riss.kr/link?id=A106428050
2018
English
KCI우수등재,SCOPUS,ESCI
학술저널
52-55(4쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
We reported a new method to enhance the photoluminescence (PL) properties of Eu<SUP>3+</SUP> ions doped Gd₂Mo₄O15 phosphors via cation substitution. With the aid of conventional sol-gel method, a series of Eu<SUP>3+</SUP> i...
We reported a new method to enhance the photoluminescence (PL) properties of Eu<SUP>3+</SUP> ions doped Gd₂Mo₄O15 phosphors via cation substitution. With the aid of conventional sol-gel method, a series of Eu<SUP>3+</SUP> ions doped Gd2(1-x)Y2xMo₄O15 phosphors were prepared. The prepared samples emitted red light when excited at 393 nm. Moreover, when part of the Gd<SUP>3+</SUP> ions was substituted by the Y<SUP>3+</SUP> ions, the PL emission intensity of the studied samples was enhanced and the optimal doping concentration for Y3+ ions was 30 mol%. The calculated CIE coordinate (0.663,0.337) was situated in the red region. Furthermore, the thermal quenching behaviors of the synthesized Eu<SUP>3+</SUP> ions doped Gd2(1-x)Y2xMo₄O15 phosphors were studied. At last, we also packaged a red-emitting light-emitting diode device by integrating the obtained phosphors and a near-ultraviolet chip to verify the applications of the Eu<SUP>3+</SUP> ions doped Gd2(1-x)Y2xMo₄O15 phosphors for indoor lighting.
목차 (Table of Contents)
Temperature-dependent luminescence properties of digital-alloy In(Ga1-zAlz)As
Study of driving and thermal stability of anode-type ion beam source by charge repulsion mechanism
Study of Driving and Thermal Stability of Anode-type Ion Beam Source by Charge Repulsion Mechanism