<P>The effects of 200 degrees C post-annealing and 85 degrees C and 85% relative humidity temperature and humidity (T/H) treatments on the interfacial adhesion energy of a Cu/SiNx interface were systematically investigated. The results of a four...
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https://www.riss.kr/link?id=A107656843
2016
-
SCOPUS,SCIE
학술저널
06JD01
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>The effects of 200 degrees C post-annealing and 85 degrees C and 85% relative humidity temperature and humidity (T/H) treatments on the interfacial adhesion energy of a Cu/SiNx interface were systematically investigated. The results of a four...
<P>The effects of 200 degrees C post-annealing and 85 degrees C and 85% relative humidity temperature and humidity (T/H) treatments on the interfacial adhesion energy of a Cu/SiNx interface were systematically investigated. The results of a four-point bending test, X-ray photoemission spectroscopy, and high-resolution transmission electron microscopy revealed that the interfacial adhesion energy during T/H treatment decreased with time faster than during annealing treatment, which is closely related to the faster Cu oxidation of SiNx/Cu interfaces. (C) 2016 The Japan Society of Applied Physics</P>
Investigation of drift effect on silicon nanowire field effect transistor based pH sensor