Low-Temperature Metal-Oxide Thin-Film Transistors Formed by Directly Photopatternable and Combustible Solution Synthesis

다국어 초록 (Multilingual Abstract)

<P>We investigated the formation of ultraviolet (UV)-assisted directly patternable solution-processed oxide semiconductor films and successfully fabricated thin-film transistors (TFTs) based on these films. An InGaZnO (IGZO) solution that was modified chemically with benzoylacetone (BzAc), whose chelate rings decomposed via a π–π* transition as result of UV irradiation, was used for the direct patterning. A TFT was fabricated using the directly patterned IGZO film, and it had better electrical characteristics than those of conventional photoresist (PR)-patterned TFTs. In addition, the nitric acid (HNO<SUB>3</SUB>) and acetylacetone (AcAc) modified In<SUB>2</SUB>O<SUB>3</SUB> (NAc-In<SUB>2</SUB>O<SUB>3</SUB>) solution exhibited both strong UV absorption and high exothermic reaction. This method not only resulted in the formation of a low-energy path because of the combustion of the chemically modified metal-oxide solution but also allowed for photoreaction-induced direct patterning at low temperatures.</P><P><B>Graphic Abstract</B>
<IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2013/aamick.2013.5.issue-9/am302722h/production/images/medium/am-2012-02722h_0008.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am302722h'>ACS Electronic Supporting Info</A></P>