GaAs/AlAs/GaAs 공명관통다이오드의 특성 = Properties of GaAs/AlAs/GaAs Resonant Tuneling Diodes

다국어 초록 (Multilingual Abstract)

GaAs/AlAs/GaAs RTD's(Resonant Tunneling Diodes) have been fabricated and characterized. Peak to Valley Ratio has been found to be 3.16 at the room temperature for a RTD with the quantum well width of 45A and quantum barrier width of 40A. Peak voltage, peak current, valley voltage, and valley current have been measured to be 690㎷, 9.2㎃, 880㎷, and 2.9㎃, respectively. About 160㎷ out of 690㎷ for the peak voltage could be accounted for as being due to the contact resistance under the contact pads, about 240㎷ as being due to the voltage needed to lineup the quasibound energy level of the DBQW(Double Barrier Quantum Well) in the RTD to the bottom of the conduction band of the emitter. About 190㎷ could not be accounted for by the simplified calculation employed in the analysis. It will be needed to calculate accurately the electrostatic potential profile near the DBQW.