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Compound Semiconductor Requirements for Fiber Optic Telecommunications
Scott, M. G. GaAS MANTECH 2000 p.3-6
Invited Presentation Present and Future of GaAs Technologies in Japan
Fukuta, M. GaAS MANTECH 2000 p.7-12
A New Production Solution for High Selective and Low-Damage Etching of GaAs-Based Devices
Lee, J.;Devre, M.;Johnson, D.;Sasserath, J.;Clayton, F.;Pearton, S. GaAS MANTECH 2000 p.13-16
Improvement of Surface Morphology for InGap HBT
Essilfie, G.;Low, T.;Chou, H.;Kuhn, D.;DeLaCruz, M.;D Avanzo, D.;Seaward, K.;Carr, E.;Change, Y. L. GaAS MANTECH 2000 p.17-20
III-V Dry Etching by CCD-controlled in situ Interferometry
John, W.;Weixelbaum, L.;Wittrich, H.;Frankowski, G.;Wurfl, J. GaAS MANTECH 2000 p.21-24
Electrochemical Etching Impact on GaAs Process, Mask Design and Device Performance
Hallakoun, I.;Boterashvili, T.;Bunin, G.;Shapira, Y. GaAS MANTECH 2000 p.25-28
Corrosion Behavior and Surface Studies of GaAs in Acidic Solutions
Steer, C. A.;Luo, J. L.;Ivey, G. G. GaAS MANTECH 2000 p.29-34
InP HBT Technology and Applications
Oki, A. K.;Streit, D. C.;Kobayashi, K. W.;Gutierrez-Aitken, A.;Tran, L. T.;Grossman, P. C.;Block, T.;Yamada, F.;Sawdai, D.;Lammert, M. D. GaAS MANTECH 2000 p.35-36
Advanced InP/InGaAs HBTs Technology for Low-Power Lightwave Communication Circuit Applications
Yamahata, S.;Nakajima, H.;Ida, M.;Sano, E.;Ishii, Y. GaAS MANTECH 2000 p.37-40
WITHDRAWN: Ultra High Speed SiGe challenges GaAs: Infineon's B7HFC, a 75 GHz BiCMOS Process
Lachner, R.;Klein, W. GaAS MANTECH 2000 p.41-42