Ultraviolet light from nitride semiconductor LEDs is to be converted into white light with high color rendering, the phosphors should efficiently absorb the pump LED light. The absorption bands of YNbO₄:Eu³+ and GdNbO₄:Eu³+ are red-shifted with ...
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https://www.riss.kr/link?id=A104128691
Tae-Keun Park (Ajou Univ.) ; Sun-il Mho (Ajou Univ.) ; Han-Cheol Ahn (Ajou Univ.)
2008
English
KCI등재,SCI,SCIE,SCOPUS
학술저널
431-434(4쪽)
22
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
Ultraviolet light from nitride semiconductor LEDs is to be converted into white light with high color rendering, the phosphors should efficiently absorb the pump LED light. The absorption bands of YNbO₄:Eu³+ and GdNbO₄:Eu³+ are red-shifted with ...
Ultraviolet light from nitride semiconductor LEDs is to be converted
into white light with high color rendering, the phosphors should
efficiently absorb the pump LED light. The absorption bands of
YNbO₄:Eu³+ and GdNbO₄:Eu³+ are red-shifted with
Bi³+ incorporation in the lattice. The excitation band maximum
and the long-wavelength band edge of the YNbO₄:Eu³+ red
phosphor have been severely red-shifted at high Bi³+ contents.
With 15 atom\% of Bi³+ incorporation in the lattice,
(Y0.80Bi0.15)NbO₄:Eu³+, the absorption band edge
shifts to 352 nm, which will efficiently absorb the LED pump-light
in the long-wavelength UV region.
다국어 초록 (Multilingual Abstract)
Ultraviolet light from nitride semiconductor LEDs is to be converted into white light with high color rendering, the phosphors should efficiently absorb the pump LED light. The absorption bands of YNbO₄:Eu³+ and GdNbO₄:Eu³+ are red-shifted wi...
Ultraviolet light from nitride semiconductor LEDs is to be converted
into white light with high color rendering, the phosphors should
efficiently absorb the pump LED light. The absorption bands of
YNbO₄:Eu³+ and GdNbO₄:Eu³+ are red-shifted with
Bi³+ incorporation in the lattice. The excitation band maximum
and the long-wavelength band edge of the YNbO₄:Eu³+ red
phosphor have been severely red-shifted at high Bi³+ contents.
With 15 atom\% of Bi³+ incorporation in the lattice,
(Y0.80Bi0.15)NbO₄:Eu³+, the absorption band edge
shifts to 352 nm, which will efficiently absorb the LED pump-light
in the long-wavelength UV region.
참고문헌 (Reference)
1 Y. Narukawa, 41 : L371-, 2002
2 G. Blasse, 3 : 109-, 1970
3 G. Blasse, 14 : 231-, 1976
4 T. Nishida, 82 : 3817-, 2003
5 Y. Sato, 35 : 838-, 1996
6 S. Nakamura, 64 : 1687-, 1994
7 N. Yoshimoto, 59 : 2251-, 1991
8 H. Weitzel, 152 : 69-, 1980
9 K. W. Min, 146 : 3218-, 1999
10 S. Neeraj, 387 : 2-, 2004
1 Y. Narukawa, 41 : L371-, 2002
2 G. Blasse, 3 : 109-, 1970
3 G. Blasse, 14 : 231-, 1976
4 T. Nishida, 82 : 3817-, 2003
5 Y. Sato, 35 : 838-, 1996
6 S. Nakamura, 64 : 1687-, 1994
7 N. Yoshimoto, 59 : 2251-, 1991
8 H. Weitzel, 152 : 69-, 1980
9 K. W. Min, 146 : 3218-, 1999
10 S. Neeraj, 387 : 2-, 2004
11 G. Blasse, 48 : 217-, 1968
12 D. A. Grisafe, 17 : 313-, 1976
13 A. H. Buth, 64 : 669-, 1981
14 R. Mueller-Mach, 8 : 339-, 2002
15 S. H. Lee, 89 : 221916-, 2006
16 L. Tian, 122 : 77-, 2007
17 T. Nishida, 176 : 45-, 1999
18 Y. Taniyasu, 441 : 325-, 2006
19 S. Nakamura, "The Blue Laser Diode: GaN Based Light Emitters and Lasers" Springer 1997
20 Jong Seong Bae, "Structural and Luminescent Properties of Eu-Doped GdVO4 Thin-Film Phosphors Grown on Various Substrates by Using Pulsed Laser Deposition" 한국물리학회 51 (51): 572-575, 2007
21 Yanlin Huang, "Luminescence Properties and Refractive-Index Characterization of Li+-Doped PbWO4 Single Crystals" 한국물리학회 50 (50): 493-499, 2007
22 S. J. Lee, "Formation and Characteristics of Self-Assembled InGaN/GaN Quantum-Dot Structure Grown by Using Plasma-Assisted Molecular Beam Epitaxy" 한국물리학회 51 (51): 1027-1031, 2007
Frequency-Entrainment Measures in Coupled-Oscillator Systems
Diluted Ferromagnetic Semiconductor in a Cr-Based MnTe Thin Film
Response of Charged Hadrons to a Coulomb Potential in Heavy-Ion Collisions at the RHIC
학술지 이력
연월일 | 이력구분 | 이력상세 | 등재구분 |
---|---|---|---|
2023 | 평가예정 | 해외DB학술지평가 신청대상 (해외등재 학술지 평가) | |
2020-01-01 | 평가 | 등재학술지 유지 (해외등재 학술지 평가) | |
2011-01-01 | 평가 | 등재학술지 유지 (등재유지) | |
2009-01-01 | 평가 | 등재학술지 유지 (등재유지) | |
2007-01-01 | 평가 | SCI 등재 (등재유지) | |
2005-01-01 | 평가 | 등재학술지 유지 (등재유지) | |
2002-07-01 | 평가 | 등재학술지 선정 (등재후보2차) | |
2000-01-01 | 평가 | 등재후보학술지 선정 (신규평가) |
학술지 인용정보
기준연도 | WOS-KCI 통합IF(2년) | KCIF(2년) | KCIF(3년) |
---|---|---|---|
2016 | 0.47 | 0.15 | 0.31 |
KCIF(4년) | KCIF(5년) | 중심성지수(3년) | 즉시성지수 |
0.26 | 0.2 | 0.26 | 0.03 |