Laser Ablation 법에 의해 제조된 CuIn_(x)Ga_(1-x)Se₂ 박막의 특성 = The Characteristics of CuIn_(x)Ga_(1-x)Se₂Thin Films prepared by Laser Ablation

다국어 초록 (Multilingual Abstract)

The photovoltaic power system has received considerable attention as a petroleum- alternative energies to solve environmental problems in the worldwide scale. The energy gap of CuInSe₂ which attracts the considerable attention as absorber layer material of a thin film solar cell is 1.04eV, and it is smaller than 1.4∼1.5eV which is optimum range for the solar cell. In this study, CuInxGa_(1 - x) Se₂ thin film which added Ga to CuInSe₂ for the wide band gap was deposited by laser ablation method. And its composition , structure, optical- absorption coefficient and band gap were ex amined.
Thin films equal to the composition of the targets were obtained, and lattice parameter of a and c axis linearly changed to 5.61∼5.76 and 11.09∼11.58Å respectively with the increase in x. The optical- absorption coefficient as all experimental range was over 2×10⁴cm^(- 1), and the band gap changed from 1.00 to 1.69eV with the decrease in the In content x.

목차 (Table of Contents)

• Ⅰ. 서론
• Ⅱ. 실험 방법
• Ⅲ. 결과 및 고찰
• Ⅳ. 결론
• Ⅴ. 참고문헌