The effects of TEG-based levelers containing different counter anions on Cu electrodeposition = The effects of TEG-based levelers containing different counter anions on Cu electrodeposition

다국어 초록 (Multilingual Abstract)

In the development of super integrated circuit, through silicon via (TSV) realizes the shortest interconnects between multiple chips. The successful chip performance relies on the defect-free filling of TSV during the Cu electrodeposition, and that is achieved from the bottom-up filling of a trench. Leveler, a convection dependent adsorbent, is selectively adsorbs on the top of feature and inhibits Cu electrodeposition for the formation of the overall planar Cu deposition. In this presentation, the structure-activity relation has been studied with newly synthesized bis-ammonium levelers. The new levelers contain ammoniums at the ends of linear chains, which are varied in length or the presence of ether unit. The electrochemical analyses and the gap filling performance on TSV are examined with the synthesized levelers in order to verify more effective structure of leveler on Cu electrodeposition.