Optical and electrical properties of SnO2/Ag/SnO2/SiO2/ Nb2O5 hybrid film

다국어 초록 (Multilingual Abstract)

A hybrid structure of SnO2/Ag/SnO2/SiO2/Nb2O5 was deposited on soda lime glass substrate by sequential RF/DC magnetronsputtering at room temperature and its optical and electrical properties were systematically investigated as a function of topSnO2 thickness. EMP simulation results suggested that a multilayered film of SnO2 (40 nm)/Ag (10 nm)/SnO2 (30 nm)/SiO2(10 nm)/Nb2O5 (10 nm) exhibited the highest visible transmittance of 90.1% at 550 nm, whereas experimentally measuredtransmittance showed 85.1%, somewhat lower than simulation data. The lowest Rs and ρ value were about 3.21 Ω/sq and 3.21× 10−5 Ω cm, acquired at the multi-layers with the structure of SnO2 (40 nm)/Ag (10 nm)/SnO2 (30 nm)/SiO2 (10 nm)/Nb2O5(10 nm). In addition, the sheet resistance and resistivity of SnO2/Ag/SnO2/SiO2/Nb2O5 multi layer films increased systematicallywith increasing the thickness of SnO2 layer from 40 to 55 nm. It was shown that the ÖTC values of SnO2/Ag/SnO2/SiO2/Nb2O5multi layer film were in the range of 46.4-62.1 × 10−3 Ω−1.

참고문헌 (Reference)

1 Podlogar M, 22 : 3136-3145, 2012

2 G. Haacke, 46 : 4086-, 1976

3 L. Liu, 149 : 43-46, 2015

4 Q. Wan, 90 : 222107-, 2007

5 S. Yu, 552 : 150-154, 2013

6 H. J. Kim, 328 : 215-221, 2014

7 D. R. Sahu, 252 : 7509-7514, 2006

8 A. E. Hajj, 520 : 4666-4668, 2012

9 X. He, 120 : 17-21, 2015

10 J. H. Kim, 41 : 7146-7150, 2015

11 S. X. Zhang, 91 : 112113-, 2007

12 J. H. Kim, 41 : 8059-8063, 2015

13 D. Miao, 106 : 1-4, 2014

14 D. Miao, 40 : 12847-12853, 2014

15 A. Dhar, 112 : 103113-, 2012

16 R. Lachaume, 38 : 770-776, 2013

17 S. Venkatachalam, 257 : 8923-8928, 2011

18 C. Tung, "US Patent Application 20150316689 A1"

19 L. Huang, "US Patent Application 20100141608A1" 2010