CeO<SUB>2</SUB> buffer layers were deposited on YSZ single-crystal substrates using an RF-sputtering method. The development of crystalline textures of sputtered CeO<SUB>2</SUB> films at different sputtering pressure and their ...
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다국어 초록 (Multilingual Abstract)
CeO<SUB>2</SUB> buffer layers were deposited on YSZ single-crystal substrates using an RF-sputtering method. The development of crystalline textures of sputtered CeO<SUB>2</SUB> films at different sputtering pressure and their ...
CeO<SUB>2</SUB> buffer layers were deposited on YSZ single-crystal substrates using an RF-sputtering method. The development of crystalline textures of sputtered CeO<SUB>2</SUB> films at different sputtering pressure and their effects on YBCO films, deposited by Metal Organic Deposition (MOD), were investigated. Both CeO<SUB>2</SUB> and subsequent YBCO films grew well epitaxially. The relative XRD peak intensities of CeO<SUB>2</SUB> (200) to substrate YSZ (200) increased with deposition pressure in the range of 3-5mTorr and were inversely proportional to the θ-2θ scan FWHM values of CeO<SUB>2</SUB> (200). Also, the reaction layers of BaCeO<SUB>3</SUB> were thicker in the samples with lower CeO<SUB>2</SUB> (200) intensities and poor out-of-plane alignment when CeO<SUB>2</SUB> were deposited at the lower pressure of 3.3mTorr. It is noted, however, that the superconducting layer grew well epitaxially on these BaCeO<SUB>3</SUB> layers, possibly due to the epitaxial relation between CeO<SUB>2</SUB> and YBCO. The superconducting critical currents of MOD-YBCO films showed an increasing tendency as both the Δ2θ (CeO<SUB>2</SUB>) and BaCeO<SUB>3</SUB> peak intensities decreased.
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