Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

다국어 초록 (Multilingual Abstract)

In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having Ag/Si₃N₄/TiN and Ag/Si₃N₄/p+ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

목차 (Table of Contents)

• Abstract
• I. INTRODUCTION
• II. EXPERIMENTAL
• III. RESULTS AND DISCUSSION
• IV. CONCLUSIONS
• REFERENCES

참고문헌 (Reference)

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