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      KCI등재 SCI SCIE SCOPUS

      Voltage-Mode 1.5 Gbps Interface Circuits for Chip-to-Chip Communication

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      https://www.riss.kr/link?id=A103371301

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      다국어 초록 (Multilingual Abstract)

      In this paper, interface circuits that are suitable for point-to-point interconnection with an over 1 Gbps data rate per pin are proposed. To achieve a successful data transfer rate of multi-gigabits per-second between two chips with a point-to-point interconnection, the input receiver uses an on-chip parallel terminator of the pass gate style, while the output driver uses the pullup and pulldown transistors of the diode-connected style. In addition, the novel dynamic voltage level converter (DVLC) has solved such problems as the access time increase and valid data window reduction. These schemes were adopted on a 64 Mb DDR SRAM with a 1.5 Gbps data rate per pin and fabricated using a 0.10 μm dual gate oxide CMOS technology.
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      In this paper, interface circuits that are suitable for point-to-point interconnection with an over 1 Gbps data rate per pin are proposed. To achieve a successful data transfer rate of multi-gigabits per-second between two chips with a point-to-point ...

      In this paper, interface circuits that are suitable for point-to-point interconnection with an over 1 Gbps data rate per pin are proposed. To achieve a successful data transfer rate of multi-gigabits per-second between two chips with a point-to-point interconnection, the input receiver uses an on-chip parallel terminator of the pass gate style, while the output driver uses the pullup and pulldown transistors of the diode-connected style. In addition, the novel dynamic voltage level converter (DVLC) has solved such problems as the access time increase and valid data window reduction. These schemes were adopted on a 64 Mb DDR SRAM with a 1.5 Gbps data rate per pin and fabricated using a 0.10 μm dual gate oxide CMOS technology.

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      참고문헌 (Reference)

      1 Y.J. Park, "Output-Buffer-Delay Modeling Circuit for aHigh-Speed Data Interface" 40 (40): 709-711, apr.2002

      2 S.I. Yoon, "Modeling of Multi-Level Interconnects for Full-Chip Simulation" 40 (40): 742-748, apr.2002

      3 H. Djahanshhi, "ECL-Compatible I/OInterface in 0.35-um CMOS" 34 : 1074-1083, aug.1999

      4 Cangsang Zhao, "An 18-Mb, 12.3GB/s CMOS Pipeline-Burst Cache SRAM with 1.54 Gb/s/pin" 34 : 1564-1570, nov.1999

      5 Y.S Yang, "A Serial Input/Output Circuit with 8 bit and 16 bitSelection Modes" 24 (24): 462-464, dec.2002

      6 Chien-Cheng Yu,Wei-Ping Wang,, "A NewLevel Converter for Low-Power Applications" 113-116, 2001

      7 H. Muljono, "A 400 MT/s 6.4 GB/s Multiprocessor BufInterface" 338-339, 2003

      8 G.J. Ahn, "A 2-Gbaud 0.7-V Swing VoltageMode Driver and On-Chip Terminator for High Speed NRZ DataTransmission" 35 : 915-918, 2000

      9 C.K.K. Yang, "A 0.8 um CMOS 2.5 Gb/s OversamplingReceiver and Transmitter for Serial Links" 31 : 2015-2023, 1996

      1 Y.J. Park, "Output-Buffer-Delay Modeling Circuit for aHigh-Speed Data Interface" 40 (40): 709-711, apr.2002

      2 S.I. Yoon, "Modeling of Multi-Level Interconnects for Full-Chip Simulation" 40 (40): 742-748, apr.2002

      3 H. Djahanshhi, "ECL-Compatible I/OInterface in 0.35-um CMOS" 34 : 1074-1083, aug.1999

      4 Cangsang Zhao, "An 18-Mb, 12.3GB/s CMOS Pipeline-Burst Cache SRAM with 1.54 Gb/s/pin" 34 : 1564-1570, nov.1999

      5 Y.S Yang, "A Serial Input/Output Circuit with 8 bit and 16 bitSelection Modes" 24 (24): 462-464, dec.2002

      6 Chien-Cheng Yu,Wei-Ping Wang,, "A NewLevel Converter for Low-Power Applications" 113-116, 2001

      7 H. Muljono, "A 400 MT/s 6.4 GB/s Multiprocessor BufInterface" 338-339, 2003

      8 G.J. Ahn, "A 2-Gbaud 0.7-V Swing VoltageMode Driver and On-Chip Terminator for High Speed NRZ DataTransmission" 35 : 915-918, 2000

      9 C.K.K. Yang, "A 0.8 um CMOS 2.5 Gb/s OversamplingReceiver and Transmitter for Serial Links" 31 : 2015-2023, 1996

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2005-09-27 학술지등록 한글명 : ETRI Journal
      외국어명 : ETRI Journal
      KCI등재
      2003-01-01 평가 SCI 등재 (신규평가) KCI등재
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.78 0.28 0.57
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.47 0.42 0.4 0.06
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