Control of Short-Channel Effects in Nano DG MOSFET Using Gaussian-Channel Doping Profile

다국어 초록 (Multilingual Abstract)

This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effectsin the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations werecompleted through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within thenon-equilibrium Green’s function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profileparameters such as the peak doping concentration and the straggle parameter were studied in terms of the draincurrent, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulationresults show that the short-channel effects were improved in correspondence with incremental changes of the straggleparameter and the peak doping concentration.

참고문헌 (Reference)

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