Quality improvement of fast-synthesized graphene films by rapid thermal chemical vapor deposition for mass production

다국어 초록 (Multilingual Abstract)

<P><B>Abstract</B></P> <P>The conventional thermal chemical vapor deposition (T-CVD) equipment takes a long time to synthesize a thin film, which is the stumbling block in the commercialization of monolayer graphene. Rapid thermal chemical vapor deposition (RT-CVD) equipment is suitable for rapid graphene synthesis on most surfaces of large area transition metals. The initial graphene domains synthesized by RT-CVD were visualized and compared with graphene synthesized by T-CVD. The number of graphene domains grown by RT-CVD was approximately 12.31% larger than those synthesized by T-CVD. The surface of the thermally treated metal substrate determines the density and shape of the graphene domains due to the reduced surface irregularities and hence flattens. As a result of the thermal treatment of the copper foil, the I<SUB>D</SUB>/I<SUB>G</SUB> value of RT-CVD graphene decreased by 12.5%. Thus, it was confirmed that the electrical characteristics were improved as the average value of the sheet resistance reduced by 15.8%.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Graphene films were fast-synthesized by rapid thermal chemical vapor deposition for mass production. </LI> <LI> The density and shape of initial graphene domains was determined by the surface roughness of the metal substrate. </LI> <LI> The surface roughness of copper foil was improved by thermal treatment. </LI> <LI> The high quality graphene by Rapid thermal chemical vapor deposition was optimized on the thermal treated cu foil for 85 min. </LI> </UL> </P>