Influence of Parasitic Parameters on Switching Characteristics and Layout Design Considerations of SiC MOSFETs

다국어 초록 (Multilingual Abstract)

Parasitic parameters have a larger influence on Silicon Carbide (SiC) devices with an increase of the switching frequency. This limits full utilization of the performance advantages of the low switching losses in high frequency applications. By combining a theoretical analysis with a experimental parametric study, a mathematic model considering the parasitic inductance and parasitic capacitance is developed for the basic switching circuit of a SiC MOSFET. The main factors affecting the switching characteristics are explored. Moreover, a fast-switching double pulse test platform is built to measure the individual influences of each parasitic parameters on the switching characteristics. In addition, guidelines are revealed through experimental results. Due to the limits of the practical layout in the high-speed switching circuits of SiC devices, the matching relations are developed and an optimized layout design method for the parasitic inductance is proposed under a constant length of the switching loop. The design criteria are concluded based on the impact of the parasitic parameters. This provides guidelines for layout design considerations of SiC-based high-speed switching circuits.

참고문헌 (Reference)

1 S. Clemente, "Understanding HEXFET switching performance" International Rectifier, Inc. 2013

2 J. Wang, "The latest technology research and application prospects of the intelligent electrical apparatus" 30 (30): 1-11, 2015

3 "The influence of parasitic network parameters on the switching behavior of power MOSFETs when switching ohmic/inductive loads"

4 Y. Zheng, "The SiC age of power electronics is coming towards us" 5 (5): 1-2, 2006

5 A. Anthon, "Switching investigations on a SiC MOSFET in a TO-247 package" 1 : 1854-1860, 2014

6 P. Nayak, "Study of the effects of parasitic inductances and device capacitances on 1200 V, 35A SiC MOSFET based voltage source inverter design" 1 : 1-6, 2014

7 Z. Qian, "Progress in power electronics system integration" 3 (3): 2-14, 2006

8 M. Liang, "Performance comparison of SiC MOSFET, Si CoolMOS, and IGBT for DAB converter" 12 (12): 41-50, 2015

9 Z. Dong, "Impact of common source inductance on switching loss of SiC MOSFET" 1 : 1-5, 2015

10 B. Cougo, "High current ripple for power density and efficiency improvement in wide bandgap transistor-based buck converters" 30 (30): 4489-4504, 2015

11 Z. Chen, "Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics" 1 : 164-169, 2010

12 H. Li, "Detail study of SiC MOSFET switching characteristics" 1 : 1-5, 2014

13 J. Wang, "Characterization and experimental assessment of the effects of parasitic elements on the MOSFET switching performance" 28 (28): 573-590, 2013

14 J. Wang, "Characterization and experimental assessment of the effects of parasitic elements on the MOSFET switching performance" 28 (28): 573-590, 2013

15 Z. Wang, "Analysis of stray inductance's influence on SiC MOSFET switching performance" 1 : 2838-2843, 2014

16 J. Noppakunkajorn, "Analysis of high-Speed PCB with SiC devices by investigating turn-Off overvoltage and interconnection inductance influence" 1 (1): 118-125, 2015

17 "Advanced power semiconductor devices- challenges and solutions in applications"