Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence o...
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https://www.riss.kr/link?id=A102494979
2016
English
SCOPUS,KCI등재,ESCI
학술저널
293-296(4쪽)
0
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence o...
Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.
참고문헌 (Reference)
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1 Herbert B. Michaelson, "The work function of the elements and its periodicity" AIP Publishing 48 (48): 4729-, 1977
2 Demet Korucu, "The origin of negative capacitance in Au/n-GaAs Schottky barrier diodes(SBDs) prepared by photolithography technique in the wide frequency range" 한국물리학회 13 (13): 1101-1108, 2013
3 Şemsettin Altındal, "The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures" AIP Publishing 109 (109): 074503-, 2011
4 Özkan Vural, "Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics" Elsevier BV 513 : 107-111, 2012
5 Engin Arslan, "Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures" Elsevier BV 356 (356): 1006-1011, 2010
6 A. Singh, "Temperature dependence of the electrical characteristics of Yb/p-InP tunnel metal-insulator-semiconductor junctions" AIP Publishing 68 (68): 3475-, 1990
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학술지 이력
연월일 | 이력구분 | 이력상세 | 등재구분 |
---|---|---|---|
2023 | 평가예정 | 해외DB학술지평가 신청대상 (해외등재 학술지 평가) | |
2020-01-01 | 평가 | 등재학술지 유지 (해외등재 학술지 평가) | |
2011-01-01 | 평가 | 등재학술지 유지 (등재유지) | |
2009-01-01 | 평가 | 등재학술지 유지 (등재유지) | |
2006-01-01 | 평가 | 등재학술지 선정 (등재후보2차) | |
2005-05-30 | 학회명변경 | 영문명 : 미등록 -> The Korean Institute of Electrical and Electronic Material Engineers | |
2005-05-30 | 학술지명변경 | 한글명 : Transactions on Electrical and Electroni -> Transactions on Electrical and Electronic Materials | |
2005-01-01 | 평가 | 등재후보 1차 PASS (등재후보1차) | |
2003-01-01 | 평가 | 등재후보학술지 선정 (신규평가) |
학술지 인용정보
기준연도 | WOS-KCI 통합IF(2년) | KCIF(2년) | KCIF(3년) |
---|---|---|---|
2016 | 0.08 | 0.08 | 0.1 |
KCIF(4년) | KCIF(5년) | 중심성지수(3년) | 즉시성지수 |
0.1 | 0.11 | 0.239 | 0.07 |