Power-Transister의 構造的面에서 觀察한 破壞原因 = The structural Cause of Breakdown in Power-Transistor

다국어 초록 (Multilingual Abstract)

Power transistor is still in use in pratic-al circuits like horizontal out-put, deflection, inverter and the constant current circuit. But the Problem of break-down have become a matter of primary concern of both the manufacters and users.
Becousethe prominent factor of this breakdown was identified as 『Secondary Breakdown.』
This paper observed the aspect and the cause of secondary-breakdown from the structural angle.
The result of the present study are as follows.
(1) The broader width of Base is within the permitted limit of rhrnJ and switching-time, the better.
(2) It has stabilizing charactristic in the Breakdown that the ratio resistance of Base is low as possibleas.
(3) The sand-paper of 600? is superier to the others (200?, 400?, 800? & 1,000?) in lapping the back side of chip.
(4) The other, it is useful to reduce thermal, mechanical shock in the process of Die-Bonding and Wire Bonding.

목차 (Table of Contents)

• Ⅰ. 序論
• Ⅱ. 2次降伏特性과 TR 構造
• Ⅲ. Base層의 幅과 比抵抗이 S/B에 미치는 영향
• Ⅳ. chip의 表面이 S/B에 미치는 영향
• Ⅴ. 結論