One of the challenges for the III-V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow junction diode. In this letter, we demonstrate a junction depth-controllable ultra-shallow (15nm) n-IGZO/p-GaAs hetero-junction diod...
One of the challenges for the III-V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow junction diode. In this letter, we demonstrate a junction depth-controllable ultra-shallow (15nm) n-IGZO/p-GaAs hetero-junction diode at a low temperature (300<SUP>o</SUP>C). Through TOF-SIMS, J-V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs junctions are carefully investigated. On-current density (0.02A/cm<SUP>2</SUP>) and on/off-current ratio (4x10<SUP>2</SUP>) were obtained in the junction annealed at 300<SUP>o</SUP>C. Additionally, the effect of n-IGZO thickness control on junction current is investigated, comparing 15nm and 30nm thick n-IGZO samples.