High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

다국어 초록 (Multilingual Abstract)

The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristicsof dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storagecapacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practicaltechnique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite filmsconsisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through theoptimization process. The leakage current of the optimized Al2O3–BN thin films was decreased by a factor of 100 at 3V,compared to pristine Al2O3thin film without a loss of the dielectric constant or degradation of the morphological roughness.
The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN withan optimized concentration into the Al2O3dielectric film reduced the density of oxygen vacancies which act as defect states,thereby improving the dielectric characteristics.

참고문헌 (Reference)

1 Zirkl, M, 19 : 2241-, 2007

2 Majewski, L.A, 4 : 27-, 2003

3 Ha, T.-J, 102 : 123506-, 2013

4 Jeon, J.Y., 413 : 118-, 2017

5 Kamimura, T, 104 : 192104-, 2014

6 Feng, T, 8 : 6512-, 2016

7 Wan, Z, 7 : 26716-, 2015

8 Choi, M.S, 113 : 044501-, 2013

9 Pan, Y.X., 9 : 1689-, 2016

10 Lee, D.W., 58 : 378-, 2004

11 Li, W, 103 : 36-, 2014

12 McN, N, 147 : 269-, 2000

13 Kubo, T, 29 : 045004-, 2014

14 Cho, A.J, 3 : Q67-, 2014

15 Hou, X., 49 : 39-, 2014

16 Chen, Y, 84 : 2430-, 2004

17 Jo, I.S., 13 : 550-, 2003

18 Zhu, J., 15 : 7029-, 2015

19 Zou, X, 28 : 2062-, 2016

20 Delplanque, A, 314 : 280-, 2014

21 Moriyam, Y, 104 : 086501-, 2014

22 Park, G.-H, 55 : 091502-, 2016

23 Boll, D, 14 : 2193-, 2014

24 Lee, Y.S, 6 : 2112-, 2013

25 Yue, Y, 9 : 1298-, 2017

26 Luo, B, 2 : 510-, 2014

27 Fang, R.-C., 8 : 92-, 2013

28 Ha, T.-J, 6 : 8441-, 2014

29 Bo Qu, "Recent Progress in Tungsten Oxides based Memristors and their Neuromorphological Applications" 대한금속·재료학회 12 (12): 715-731, 2016

30 Xing-Wei Ding, "Effect of O2 Plasma Treatment on Density-of-States in a-IGZO Thin Film Transistors" 대한금속·재료학회 13 (13): 45-50, 2017