Field - domain dynamics and current self - oscillations in negative - effective - mass terahertz oscillators

다국어 초록 (Multilingual Abstract)

Field-domain dynamics and current self-oscillations are theoretically studied in quantum-well (QW) negative-effectivemass(NEM) p^+pp^+ diodes when the electric field is applied along the direction of the well. The origin of current self-oscillations is the formation and traveling of electric-field domains in the p-base. We have accurately considered the scattering contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon. It's indicated that, both the applied bias and the doping concentration largely influence the current patterns and self-oscillating frequencies, which lie in the ㎔ range for the NEM p^+pp^+ diode with a submicrometer p-base. The complicated field-domain dynamics is presented with the applied bias as the controlling parameter.

목차 (Table of Contents)

• Abstract
  
• 1. Introduction
  
• 2. Negative differential velocity of nagative - effective - mass semiconductors
  
• 3. Field - domain dynamics and current self - oscillation
  
• 4. Conclusions
  
• Acknowledgments
  
• References