Some Aspects of the MOCVD Growth of ZnO Nanorods by Using N2O

다국어 초록 (Multilingual Abstract)

The MOCVD growth of ZnO one-dimensional structures is investigated. N2O was used as an oxygen source to carry out depositions between 640 ℃ and 780 ℃. Some key growth parameters, such as the precursors nature, the carrier gases nature, or the substrate treatment, were varied in order to observe and understand some evolution in the ZnO film morphology. We found that well-defined arrays of 1D structures were dicult to achieve in the considered range of temperatures, by using DMZn-TEN and N2O as precursors and N2 as a carrier gas. To the contrary, ZnO nanorods and nanotubes were produced under the same conditions when the nitrogen carrier gas was replaced by helium, and ZnO nanoneedles were produced when DEZn was used instead of DMZn-TEN. The morphologies of the ZnO nanostructures were compared between samples grown on as-received (0001) sapphire, annealed (0001) sapphire, (111) silicon or a 150-nm-thick ZnO buffer layer.

참고문헌 (Reference)

1 C. Neumann, 244 : 1451-, 2007

2 P. Fons, 201/202 : 627-, 1999

3 R. Kling, 15 : 1043-, 2004

4 K. Ogata, 248 : 25-, 2003

5 A. Ohtomo, 75 : 2635-, 1999

6 S. Sallet, 229 : 903-, 2002

7 A. Dadgar, 267 : 140-, 2004

8 J. Dai, 290 : 426-, 2006

9 B. P. Zhang, 83 : 1635-, 2003

10 S. Muthukumar, 225 : 197-, 2001

11 W. I. Park, 80 : 4232-, 2002