This study evaporates PbTiO₃ layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of PbTiO₃ and increase th...
This study evaporates PbTiO₃ layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of PbTiO₃ and increase the reliability and reproduction of PbTiO₃ thin film. It is confirmed that the variation of electric Constant by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary.
Peak of electric Constant value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric constant values is induced by dipole polarization shown in the dielectric of thin film.
Complex electric constant ( ε1 , ε2) has larger peak values as its thickness is thinner and then it is larger according to the increase of frequency. Electric constant by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.