Extended Trench Gate Superjunction Lateral Power MOSFET for Ultra-Low Specific on-Resistance and High Breakdown Voltage

다국어 초록 (Multilingual Abstract)

In this paper, a lateral power metal–oxide–semiconductor field-effect transistor with ultra-lowspecific on-resistance is proposed to be applied to a highvoltage(up to 200 V) integrated chip. The proposedstructure has two characteristics. Firstly, a high level ofdrift doping concentration can be kept because a tiltimplantedp-drift layer assists in the full depletion of then-drift region. Secondly, charge imbalance is avoided byan extended trench gate, which suppresses the trenchcorner effect occurring in the n-drift region and helpsachieve a high breakdown voltage (BV). Compared to aconventional trench gate, the simulation result shows a37.5% decrease in Ron.sp and a 16% improvement in BV.

참고문헌 (Reference)

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