Nickel induced crystallization of amorphous silicon (a-Si) has been studied by selective deposition of Ni on a-Si thin films. The kinetics of crystallization for MIC was found to be greatly enhanced than that of SPC. Ni-induced crystallization is a pr...
Nickel induced crystallization of amorphous silicon (a-Si) has been studied by selective deposition of Ni on a-Si thin films. The kinetics of crystallization for MIC was found to be greatly enhanced than that of SPC. Ni-induced crystallization is a promising technique for low-temperature fabrication of poly-Si thin-film transistors needed for large area applications. Lateral growth of polycrystalline silicon mediated by the formation of nickel silicide, has been successfully employed for the fabrication of high-performance TFTs. A-Si thin films on which Ni films were deposited with various thickness were crystallized as a function of annealing temperatures. Throughout the thesis work, wise choice of both the thickness of Ni and the annealing temperature was found to produce poly-Si films with high quality, thus potentially resulting in the production of TFTs with high performance.