<P><B>Abstract</B></P> <P>Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the systems developed. The evaluation of HPEM (High Power Electromagnetics) has been mainl...
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https://www.riss.kr/link?id=A107705784
2018
-
SCOPUS,SCIE
학술저널
411-417(7쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P><B>Abstract</B></P> <P>Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the systems developed. The evaluation of HPEM (High Power Electromagnetics) has been mainl...
<P><B>Abstract</B></P> <P>Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the systems developed. The evaluation of HPEM (High Power Electromagnetics) has been mainly carried out in the system level, and the case of failure analysis on the device is very rare.</P> <P>If the electronic components (semiconductor) are exposed to HPEM, the semiconductor will be destroyed by the coupling effects of electromagnetic waves. Because the HPEM has fast rise time and high voltage of the pulse, the semiconductor is vulnerable to external stress factor such as the coupled electromagnetic pulse. By injecting Damped Sinusoidal Pulse to the semiconductor devices, were observed the increase of leakage current and the physical damage.</P> <P><B>Highlights</B></P> <P> <UL> <LI> If the electronic components are exposed to HPEM, it will be destroyed by the coupling effects of electromagnetic waves. </LI> <LI> The semiconductor is vulnerable to external stress factor such as the coupled electromagnetic pulse. </LI> <LI> By injecting Damped Sinusoidal Pulse to the semiconductor devices, the increase of leakage current and the physical damage were observed. </LI> </UL> </P>
Failure signature analysis of power-opens in DDR3 SDRAMs