When a MOS device is exposed to ionizing radiation, the resulting effects from this radiation can cause modulation and / or degradation in devices characteristics and its operating life.
In this study, for investigation of radiation effects on P-type...
When a MOS device is exposed to ionizing radiation, the resulting effects from this radiation can cause modulation and / or degradation in devices characteristics and its operating life.
In this study, for investigation of radiation effects on P-type MOS capacitor, We performed to irradiate on the MOS capacitor with a cobalt-60 gamma ray source and measured the capacitance-voltage ( C-V ) method with gate oxide and total does.
From the experimental result, as follows;
1. The flatband voltage (V_fb) and the threshold voltage (V_th) are shifted toward negative bias voltage with increasing irradiation does in P-type MOS capacitors.
2. C-V curves shows are strething-out due to the non-uniformity of interface trap distribution.
This results are expiained using surface states at interface radiation-induced traps.