자기 중성방전 스퍼터링에 의한 산화몰리브덴 박막의 제작 및 그 응용

국문 초록 (Abstract)

본 실험에서 자계중성방전 스파트링 시스템으로 균일한 산화 몰리브덴 박막을 얻을 수 있었다. 한편, 열처리 조건에 따라 박막의 제반특성은 XRD, XPS 및 SEM 등으로 고찰되었다. 기판의 열처리 온도에 따라 결정성장배향이 (100)에서 (210)으로 변함으로써, 박막의 결정성이 향상되었으며, 박막의 구조는 치밀해졌다. 광전자 Mo3d의 XPS 피크치는 결합에너지 228.9[eV)과 232.4[eV]에서 검출되었지만, Ols 피크치는 532.6[eV)였다. 서지 전압으로 방전시험은 연속적으로 10회 수행되었다. 전류-전압 특성곡선으로부터, 400[V)의 전압이 인가된 상태에서 시료의 초기 및 평균 저항치는 1.4[㏁)과 800[㏀]이었다.

다국어 초록 (Multilingual Abstract)

In this experiment molybdeum oxide(MoO₃) films were prepared by a magnetic null discharge(MND) sputtering system and fundamental properties by XRD, XPS and SEM analysis were investigated. The initial and mean insulation resistance of the same with MoO₃ film were about 1.4[㏁] and 800[㏀] under the condition of applied voltage of 400[V]. The preferred orientation in the films changed from(100) to (210) with substrate temperature. Two XPS peaks of the Mo3d photoelectron were detected at the binding energies of 228.9[eV] and 232.4[eV], while the binding energy of the Ols peak was 532.6[eV). The substrate temperature and reactivity gives large effects to the structure and growth of the film and system is also very useful for performing the uniform reactive deposition It can be found from the result of a MoO₃ film deposition that the system is very useful for performing the uniform reactive sputtering.

목차 (Table of Contents)

• 요약
• Abstract
• 1. 서론
• 2. 실험장치 및 이론
• 3. 실험결과 및 고찰
• 4. 결론
• References
• 저자소개

참고문헌 (Reference)

1 J. A. Thornton, 77 : 45-, 1997

2 K. Ishida, 7 (7): 1265-, 1995

3 D. B. Miller, "The response of MOV and SiC arresters to steep-front longer duration current pulses" 6 (6): 834-, 1991

4 I. Kim, "Study of ZnO arrester model for steep front wave" 11 (11): 834-, 1996

5 R. Kukla, "Studies on the plasma localization of a magnetic neutral loop discharge using normalized radio frequency electric field" 23 : 137-, 1987

6 Y. M. Sung, "Studies on the optimum condition for the formation of a neutral loop discharge plasma" A18 : 2149-, 2000

7 T. Sakoda, "Studies on electron behaviors at downstream region of a neutral loop discharge" A20 : 1964-, 2002

8 J. Musil, "Rectangular magnetron with full target erosion" A17 : 555-, 1999

9 M. Yahaya, "Preparation and physical properties of MoO3 thin films" 3175 : 42-, 1998

10 T. Takahashi, "Preparation and magnetic properties of Co-Cr films by toroidalplasma type sputtering" 25 : 4174-, 1989

11 Y. M. Sung, "Modeling of the Electron Motion in Capacitively Coupled Magnetic Null Plasma" 30 : 142-, 2002

12 B. Chapman, "Glow Discharge Processes" John Wiley & Sons 1980

13 Y. Okraku-Yirenkyi, "Experimental and numerical analyses of electron temperature and density distributions in a magnetic neutral loop discharge" A19 : 2590-, 2001

14 S. Shichimiya, "Development of advanced arresters for GIS with new zinc-oxideelements" 13 (13): 465-, 1998

15 W. Schmidt, "Behaviour of MO-surge-arrester blocks to fast transients" 4 (4): 292-, 1989

16 Z. Yoshida, "Anomalous Resistance Induced by Chaos of Electron Motion and its Application to Plasma Production" 81 : 2458-, 1998