We experimentally analyzed the spatio-temporal profile of the pulsed THz wave generated from
the surface of a p-type InAs (100) bulk crystal irradiated with a femtosecond laser. Propagation
of the pulse during several picoseconds was observed with e...
We experimentally analyzed the spatio-temporal profile of the pulsed THz wave generated from
the surface of a p-type InAs (100) bulk crystal irradiated with a femtosecond laser. Propagation
of the pulse during several picoseconds was observed with enhanced spatial resolution in far-field
region on an arbitrary chosen two-dimensional area. The spatial configuration in the frequency
domain shows that there are two different dominant radiation patterns that depend on the radiation
frequency because the intensity profile of the pulsed THz wave has a non-Gaussian distribution.
The analysis can help us figure out the physical origins for pulsed THz wave generation from
semiconductor surfaces.?