Luminescence Properties of InP/InGaP Quantum Structures Grown by Using a Migration-Enhanced Epitaxy at Different Growth Temperatures

다국어 초록 (Multilingual Abstract)

The optical properties of InP/InGaP quantum structures (QSs) grown by using a migrationenhanced molecular beam epitaxy method have been investigated using temperature (T)-dependent photoluminescence (PL) and time-resolved PL. InP QSs were grown by varying the growth temperature from 440 C to 520 C. InP/InGaP QS samples grown at temperatures of 440 C - 480 C show typical characteristics of a QS, such as rapid bandgap shrinkage at high T and enhanced PL lifetime at low T while the sample grown at 520 C exhibits the properties of bulk InP. The growth temperature is found to determine the formation of the InP/InGaP QSs; thus, it significantly affects the structural and the optical properties of the InP/InGaP QSs. The best luminescence properties are demonstrated by the sample grown at 460 C, indicating an optimum growth temperature of 460 C.

참고문헌 (Reference)

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